Phase-transition driven memristive system
نویسندگان
چکیده
Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena.
منابع مشابه
Memristive phase switching in two-dimensional 1T-TaS2 crystals
Scaling down materials to an atomic-layer level produces rich physical and chemical properties as exemplified in various two-dimensional (2D) crystals including graphene, transition metal dichalcogenides, and black phosphorus. This is caused by the dramatic modification of electronic band structures. In such reduced dimensions, the electron correlation effects are also expected to be significan...
متن کاملThe chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions
The accurate calculation of decimal fractions is still a challenge for the binary-coded computations that rely on von Neumann paradigm. Here, we report a kind of memristive abacus based on synaptic Ag-Ge-Se device, in which the memristive long-term potentiation and depression are caused by a chemically driven phase transformation. The growth and the rupture of conductive Ag₂Se dendrites are con...
متن کاملThe memristive properties of a single VO2 nanowire with switching controlled by self-heating.
A two-terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The memristive behavior of the single VO2...
متن کاملDirect observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3
Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-tim...
متن کاملWaveform Driven Plasticity in BiFeO3 Memristive Devices: Model and Implementation
Memristive devices have recently been proposed as efficient implementations of plastic synapses in neuromorphic systems. The plasticity in these memristive devices, i.e. their resistance change, is defined by the applied waveforms. This behavior resembles biological synapses, whose plasticity is also triggered by mechanisms that are determined by local waveforms. However, learning in memristive...
متن کامل